Growth dynamics of C-induced Ge dots on Si1-xGex strained layers

Surface Science

Volumn 601, Issue 13, 2007, Pages 2783-2786

  Bernardi, A ^a   Alonso, M I ^a   Goni A R ^a   Osso J O ^a   Garriga, M ^a  

^a CSIC   (Spain)

Author keywords

C induced Ge quantum dots; Molecular beam epitaxy; RHEED; Spectroscopic ellipsometry

Indexed keywords

ADATOMS; DIFFUSION; GROWTH (MATERIALS); HIGH ENERGY ELECTRON DIFFRACTION; NUCLEATION; SEMICONDUCTING GERMANIUM; THIN FILMS;

C-INDUCED GE QUANTUM DOTS; THREE-DIMENSIONAL NUCLEATION ISLANDS; VOLMER-WEBER MODES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34250718550     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.12.048     Document Type: Article

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