Why hot carrier emission based timing probes will work for 50 nm, 1V CMOS technologies

Microelectronics Reliability

Volumn 41, Issue 9-10, 2001, Pages 1465-1470

  Tsang, J C ^a   Fischetti, M V ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRONS; FIELD EFFECT TRANSISTORS; LUMINESCENCE;

COULOMB SCATTERING; HOT ELECTRON DISTRIBUTION FUNCTIONS;

HOT CARRIERS;

EID: 0035456838     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00194-9     Document Type: Article

References (6)

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