Effects of a Bi2Ti2O7 seeding layer on properties of Bi3.5Nd0.5Ti3O12 thin film

Materials Letters

Volumn 61, Issue 19-20, 2007, Pages 4166-4168

  Yang, Ch H ^a   Wu, H T ^a   Yang, D M ^b  

^a UNIVERSITY OF JINAN   (China)

^b SHANDONG UNIVERSITY   (China)

Author keywords

Atomic force microscopy; Electrical properties; Ferroelectrics; Thin films

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTALLIZATION; DEPOSITION; ELECTRIC PROPERTIES; FERROELECTRIC MATERIALS; HYSTERESIS LOOPS; POLARIZATION; SPIN COATING;

BILAYER STRUCTURES; CHEMICAL SOLUTION DEPOSITION; HYSTERESIS CURVES; MEMORY PROPERTIES; SEEDING LAYERS;

THIN FILMS;

EID: 34250706712     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2007.01.048     Document Type: Article

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