Cathodoluminescence and Raman research of V-shape inverted pyramid in HVPE grown GaN film

Materials Letters

Volumn 61, Issue 18, 2007, Pages 3882-3885

  Wei, T B ^a   Ma, P ^a   Duan, R F ^a   Wang, J X ^a   Li, J M ^a   Liu, Zh ^a   Zeng, Y P ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Cathodoluminescence; GaN; HVPE; Red emission; V shape defects

Indexed keywords

CARRIER CONCENTRATION; CATHODOLUMINESCENCE; DOPING (ADDITIVES); GALLIUM NITRIDE; STRAIN RELAXATION; THICK FILMS;

LUMINESCENCE EMISSIONS; RED EMISSIONS; SAPPHIRE SUBSTRATES; V-SHAPE DEFECTS;

FILM GROWTH;

EID: 34250629221     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2006.12.065     Document Type: Article

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