Thermal oxidation of single crystalline aluminum nitride

Materials Characterization

Volumn 58, Issue 8-9 SPEC. ISS., 2007, Pages 672-679

  Chaudhuri, J ^a   Nyakiti, L ^a   Lee, R G ^a   Gu, Z ^b   Edgar, J H ^b   Wen, J G ^c  

^a Texas Tech University   (United States)

^b Kansas State University   (United States)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Dislocations; Electron energy loss spectroscopy; High resolution transmission electron microscopy; Oxidized aluminum nitride; Stacking faults

Indexed keywords

CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); ELECTRON ENERGY LOSS SPECTROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MOLECULAR OXYGEN; OXIDATION; SINGLE CRYSTALS; STACKING FAULTS;

DOMAIN BOUNDARIES; EPITAXIAL OXIDE LAYER; MOLECULAR NITROGEN; OXIDIZED ALUMINUM NITRIDE;

ALUMINUM COMPOUNDS;

EID: 34250624383     PISSN: 10445803     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchar.2006.11.013     Document Type: Article

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