The durability of various crucible materials for aluminum nitride crystal growth by sublimation

MRS Internet Journal of Nitride Semiconductor Research

Volumn 9, Issue , 2004, Pages

  Liu, B ^a   Edgar, J H ^a   Gu, Z ^a   Zhuang, D ^a   Raghothamachar, B ^b   Dudley, M ^b   Sarua, A ^c   Kuball, Martin ^c   Meyer III, H M ^d  

^a Kansas State University   (United States)

^b Stony Brook University   (United States)

^c UNIVERSITY OF BRISTOL   (United Kingdom)

^d OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; DIFFUSION; DISLOCATIONS (CRYSTALS); DURABILITY; EPITAXIAL GROWTH; FURNACES; GALLIUM NITRIDE; MATERIALS SCIENCE; NIOBIUM COMPOUNDS; NUCLEATION; SUBLIMATION; TANTALUM CARBIDE; THERMODYNAMICS; VAPOR PRESSURE;

CRUCIBLE REFRACTORY MATERIALS; HIGH-TEMPERATURE STRENGTH; POLYCRYSTALLINE GROWTH; THERMODYNAMIC ANALYSIS;

REFRACTORY MATERIALS;

EID: 11844267174     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300000417     Document Type: Article

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