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Volumn 46, Issue 4, 2002, Pages 573-576

High breakdown M-I-M structures on bulk AlN

(10) Luo, B a Johnson, J W a Kryliouk, O a Ren, F a Pearton, S J b Chu, S N G c Nikolaev, A E d Melnik, Yu V e Dmitriev, V A e Anderson, T J a

a University of Florida (United States)

b UNIVERSITY OF FLORIDA (United States)

c AGERE SYSTEMS (United States)

d IOFFE INSTITUTE (Russian Federation)

e TDI Inc (United States)

Author keywords

Bulk AIN; High breakdown rectifier; HVPE growth; M I M structure

Indexed keywords

ALUMINUM NITRIDE; CARRIER CONCENTRATION; CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONDUCTIVITY OF LIQUIDS; ELECTRIC RECTIFIERS; GRAIN BOUNDARIES; VAPOR PHASE EPITAXY;

HIGH BREAKDOWN RECTIFIERS;

MIM DEVICES;

EID: 18244401141 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1101(01)00299-4 Document Type: Article

Times cited : (19)

References (15)

1
- 0005985130
- (1999) J Appl Phys , vol.86 , pp. 1
- Pearton, S.J.¹ Zolper, J.C.² Shul, R.J.³ Ren, F.⁴

2
- 0001303457
- (1998) Solid-State Electron , vol.43 , pp. 1918
- Brown, E.R.¹

3
- 0031348522
- (1998) Mat Res Soc Symp Proc , vol.483 , pp. 3
- Heydt, G.T.¹ Skromme, B.J.²

4
- 0034508836
- (2000) Mat Sci Engng Rep R , vol.30 , pp. 55
- Pearton, S.J.¹ Ren, F.² Zhang, A.P.³ Lee, K.P.⁴

5
- 0000110525
- (1999) Appl Phys Lett , vol.74 , pp. 1266
- Bandic, Z.Z.¹ Bridger, P.M.² Piquette, E.C.³ McGill, T.C.⁴ Vaudo, R.P.⁵ Phanse, V.M.⁶ Redwing, J.M.⁷

6
- 0033907597
- (2000) Solid-State Electron , vol.44 , pp. 613
- Chyi, J.-I.¹ Lee, C.-M.² Chuo, C.C.³ Cao, X.A.⁴ Dang, G.T.⁵ Zhang, A.P.⁶ Ren, F.⁷ Pearton, S.J.⁸ Chu, S.N.G.⁹ Wilson, R.G.¹⁰

7
- 0001016401
- (2000) MRS Internet J Nitride Semicond Res , vol.5 S1
- Zhang, A.P.¹ Dang, G.² Cao, X.A.³ Cho, H.⁴ Ren, F.⁵ Chyi, J.-I.⁶ Lee, C.M.⁷ Nee, T.E.⁸ Chuo, C.C.⁹ Chi, G.C.¹⁰ Chu, S.N.G.¹¹ Wilson, R.G.¹² Pearton, S.J.¹³

8
- 0001518843
- (2000) Appl Phys Lett , vol.76 , pp. 1767
- Zhang, A.P.¹ Dang, G.² Ren, F.³ Han, J.⁴ Polyakov, A.Y.⁵ Smirnov, N.B.⁶ Govorkov, A.⁷ Redwing, J.M.⁸ Cao, X.⁹ Pearton, S.J.¹⁰

9
- 0001518844
- (2000) Appl Phys Lett , vol.76 , pp. 3816
- Zhang, A.P.¹ Dang, G.² Ren, F.³ Han, J.⁴ Polyakov, A.Y.⁵ Smirnov, N.B.⁶ Govorkov, A.⁷ Redwing, J.M.⁸ Cho, H.⁹ Pearton, S.J.¹⁰

10
- 20244389668
- (2001) Appl Phys Lett , vol.78 , pp. 823
- Zhang, A.P.¹ Johnson, J.W.² Ren, F.³ Han, J.⁴ Polyakov, A.Y.⁵ Smirnov, N.B.⁶ Govorkov, A.⁷ Redwing, J.M.⁸ Lee, K.P.⁹ Pearton, S.J.¹⁰

11
- 0001276713
- (2000) Appl Phys Lett , vol.77 , pp. 2918
- Zhu, T.G.¹ Lambert, D.J.H.² Shelton, B.S.³ Wong, M.M.⁴ Choudhury, V.⁵ Dupuis, R.D.⁶

12
- 0035279875
- (2001) IEEE Trans Electron Dev , vol.48 , pp. 407
- Zhang, A.P.¹ Dang, G.² Ren, F.³ Cho, H.⁴ Lee, K.P.⁵ Pearton, S.J.⁶ Chyi, J.I.⁷ Nee, T.⁸ Lee, C.M.⁹ Chuo, C.¹⁰

13
- 0035275929
- (2001) Solid-State Electron , vol.45 , pp. 405
- Johnson, J.W.¹ LaRoche, J.² Ren, F.³ Bila, B.P.⁴ Overberg, M.E.⁵ Abernathy, C.R.⁶ Chyi, J.I.⁷ Chuo, C.⁸ Nee, T.⁹ Lee, C.M.¹⁰ Lee, K.P.¹¹ Park, S.S.¹² Park, J.¹³ Pearton, S.J.¹⁴

14
- 15844370813
- (2000) MRS Internet J Nitride Semicond Res , vol.551
- Nikolaev, A.¹ Nikitina, I.² Zubrilov, A.³ Mynbaeva, M.⁴ Melnik, Yu.⁵ Dmitriev, V.⁶

15
- 85069067494
- (2001) Appl Phys Lett , vol.79 , pp. 1722
- Zhang, A.P.¹ Johnson, J.W.² Luo, B.³ Ren, F.⁴ Pearton, S.J.⁵ Park, S.S.⁶ Park, Y.J.⁷ Chyi, J.-I.⁸

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