Microstructure of epitaxial Er2O3 thin film on oxidized Si (111) substrate

Chinese Physics Letters

Volumn 24, Issue 6, 2007, Pages 1649-1652

  Xue, Xian Ying ^a   Wang, Yu Zhu ^a   Jia, Quan Jie ^a   Wang, Yong ^a,c   Chen, Yu ^a   Jiang, Xiao Ming ^a   Zhu, Yan Yan ^b   Jiang, Zui Min ^b  

^a INSTITUTE OF HIGH ENERGY PHYSICS   (China)

^b FUDAN UNIVERSITY   (China)

^c INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ERBIUM COMPOUNDS; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; SILICON COMPOUNDS; SINGLE CRYSTALS; STRAIN; SUBSTRATES; X RAY DIFFRACTION;

ATOMIC FORCE; CRYSTAL DOMAIN; GRAZING INCIDENCE X-RAY DIFFRACTION; GRAZING-INCIDENCE X-RAY DIFFRACTION; MOLECULAR-BEAM EPITAXY; OPTIMIZED CONDITIONS; SI(111) SUBSTRATE; THIN-FILMS; X RAY REFLECTIVITY; X-RAY DIFFRACTION MEASUREMENTS;

THIN FILMS;

EID: 34250027033     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/24/6/060     Document Type: Article

References (16)

1. Cho M H, Roh Y S and Whang C N 2002 Appl. Phys. Lett. 81 472
2. Osten H J, Liu J P and Gaworzewski P 2000 Technical Digest, International Electron Devices Meeting p 653
3. Robertson J 2000 J. Vac. Sci. Technol. B 18 1785
4. Xu R, Zhu Y Y and Chen S 2005 J. Cryst. Growth 277 496
5. Kaul V K and Saxena U 1977 Acta Cryst. A 33 992
6. Queralt X, Ferrater C and Snchez F 1995 Appl. Surf. Sci. 86 95
7. Kennou S, Ladas S and Grimaldi M G 1996 Appl. Surf. Sci. 102 142
8. Ono H and Katsumata T 2001 Appl. Phys. Lett. 78 1832
9. Mikhelashvili V, Eisenstein G and Edelman F 2001 J. Appl. Phys. 90 5447
10. Mikhelasvili V, Eisenstein G and Edelman F 2002 Appl. Phys. Lett. 80 2156
11. Mikhelasvili V, Eisenstein G and Edelman F 2004 J. Appl. Phys. 95 613
12. Päiväsaari J, Niinistö J and Arstila K 2005 Chem. Vap. Deposition 11 415
13. Singh M P, Thakur C S and Shalini K 2003 Appl. Phys. Lett. 83 2889
14. Zhu Y Y, Xu R and Chen S 2006 Thin Solid Films 508 86
15. Shalini K and Shivashankar S A 2005 Bull. Mater. Sci. 28 49
16. Wang J, Neaton J B and Zheng H 2003 Science 299 1719