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Volumn 54, Issue 6, 2007, Pages 1384-1393

Source-drain partitioning in MOSFET

Author keywords

Capacitance; Charge partitioning; Compact modeling; Lateral asymmetry; Mobility degradation; MOSFET; Noise

Indexed keywords

CAPACITANCE; DOPING (ADDITIVES); MATHEMATICAL MODELS;

EID: 34249910062     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.895858     Document Type: Article
Times cited : (20)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.