Capacitance modeling of laterally non-uniform MOS devices

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 751-754

  Aarts, A C T ^a   Van Der Hout, R ^a,b   Paasschens, J C J ^a   Scholten, A J ^a   Willemsen, M ^a   Klaassen, D B M ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b JACOBS UNIVERSITY BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC POTENTIAL; ELECTRON MOBILITY; PERTURBATION TECHNIQUES; VOLTAGE MEASUREMENT; CIRCUIT SIMULATION; FIELD EFFECT TRANSISTORS; MOS DEVICES;

CHANNEL DOPING; CIRCUIT SIMULATION; MOBILITY DEGRADATION; NON-LINEAR DISSIPATIVE SYSTEM;

MOSFET DEVICES; CAPACITANCE;

CAPACITANCE MODELLING; CHANNEL DOPINGS; CHARGE MODELS; CIRCUIT SIMULATORS; COMPACT TRANSISTOR MODELING; DOPING PROFILES; NON-UNIFORM; NUMERICAL RESULTS; TERMINAL CHARGES;

EID: 21644488477     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)

1. D.E. Ward, Charge-Based modeling of capacitance in MOS transistors, Ph.D. Thesis, Stanford University (1981).
2. Y. Subramanian et al., MSM 1999, pp.284-288.
3. S.F. Frere et al., ESSDERC 2001, pp.219-222.
4. J. Jang et al., MTT-S 2001, pp.967-970.
5. C. Liu and J.B. Kuo, Trans. Electron Devices 44, pp.1117-1123 (1997).
6. J. Victory et al., SISPAD 1998, pp.271-274.
7. N. D'Halleweyn et al., ISPSD 2001, pp.291-294.
8. Y. Kim et al., Trans. Electron Devices 38, pp.1641-1649 (1991).
9. Y. Chung, Circuits Devices Syst. 147, pp.219-227 (2000).
10. MM11 & MM31: www.semiconductors.philips.com/Philips_Models.
11. A.J. Scholten, IEDM 1999, pp. 163-166.
12. Y. Tsividis, Operation and Modeling of the MOS Transistor, McGraw-Hill (1987).
13. H.K. Dirks, Kapazitätskoeffizienten nichtlinearer dissipativer Systeme, Habilitationsschrift, Aachen University of Technology (1988).
14. D.E. Root, MWSCAS 2001, pp. 768-772.