Charge, current, and noise partitioning in MOSFET in the presence of mobility degradation

IEEE Electron Device Letters

Volumn 27, Issue 8, 2006, Pages 674-677

  Roy, Ananda Sankar ^a   Enz, C C ^a,b   Sallese, J M ^a  

^a EPFL   (Switzerland)

^b CSEM   (Switzerland)

Author keywords

Charge partitioning; Mobility degradation; MOSFET; Noise

Indexed keywords

ELECTRIC CHARGE; ELECTRIC CURRENTS; ELECTRON MOBILITY; INTEGRAL EQUATIONS; SPURIOUS SIGNAL NOISE;

CHARGE PARTITIONING; FIELD-DEPENDENT MOBILITY; MOBILITY DEGRADATION; WARD-DUTTON (WD) PARTITIONING;

MOSFET DEVICES;

EID: 33746508502     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.878354     Document Type: Article

References (5)

1. J. Watts, C. McAndrew, C. Enz, C. Galup-Montoro, G. Gildenblat, C. Hu, R. van Langevelde, M. Miura-Mattausch, R. Rios, and C.-T. Sah, "Advanced compact models for MOSFETs," in Tech. Proc. Workshop Compact Modeling, May 2005, pp. 3-12.
2. S.-Y. Oh, D. Ward, and R. Dutton, "Transient analysis of MOS transistors," IEEE Trans. Electron Devices, vol. ED-27, no. 8, pp. 1571-1578, Aug. 1980.
3. C. J. Ranurez, M. Deen, and C.-H. Chen, "Modeling the partition of noise from the gate-tunneling current in MOSFETs," IEEE Electron Device Lett., vol. 26, no. 8, pp. 550-552, Aug. 2005.
4. J. M. Sallese, M. Bucher, F. Krummenacher, and P. Fazan, "Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model," Solid State Electron., vol. 47, no. 4, pp. 677-683, Apr. 2003.
5. A. Aarts, R. van der Hout, J. Paasschens, A. Scholten, M. Willemsen, and D. Klaassen, "New fundamental insights into capacitance modeling of laterally nonuniform MOS devices," IEEE Trans. Electron Devices, vol. 53, no. 2, pp. 270-278, Feb. 2006.