Transient numerical study of temperature gradients during sublimation growth of SiC: Dependence on apparatus design

Journal of Crystal Growth

Volumn 297, Issue 1, 2006, Pages 20-32

  Geiser, Jürgen ^a   Klein, Olaf ^b   Philip, Peter ^b  

^a HUMBOLDT UNIVERSITY   (Germany)

^b WEIERSTRASS INSTITUTE FOR APPLIED ANALYSIS AND STOCHASTICS   (Germany)

Author keywords

A1. Computer simulation; A1. Heat transfer; A2. Growth from vapor; A2. Single crystal growth; B2. Semiconducting silicon compounds

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH; HEAT TRANSFER; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SINGLE CRYSTALS; SUBLIMATION;

GROWTH FROM VAPOR; PHYSICAL VAPOR TRANSPORT (PVT); SINGLE CRYSTAL GROWTH;

THERMAL GRADIENTS;

EID: 34249905775     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.08.046     Document Type: Article

References (27)

1. R. Madar, J. Camassel, E. Blanquet (Eds.), Silicon Carbide and Related Materials ICSCRM, Lyon, France, vol. 457-460, October 5-10, 2003, Part II of Mater. Sci. Forum, vol. 457-460, Trans Tech Publications Ltd, 2004. (Chapters 9-11).
2. Hobgood H.McD., Brady M.F., Calus M.R., Jenny J.R., Leonard R.T., Malta D.P., Müller St.G., Powell A.R., Tsvetkov V.F., Glass R.C., and Carter Jr. C.H. Mater. Sci. Forum 457-460 (2004) 3-8 Proceedings of the 10th International Conference on Silicon Carbide and Related Materials, October 5-10, 2003, Lyon, France
3. Tairov Yu.M., and Tsvetkov V.F. J. Crystal Growth 43 (1978) 209
4. Konstantinov A.O. Sublimation growth of SiC. In: Harris G.L. (Ed). Properties of Silicon Carbide, EMIS Datareview Series vol. 13 (1995), Institution of Electrical Engineers, INSPEC, London, UK 170
5. Pons M., Anikin M., Chourou K., Dedulle J.M., Madar R., Blanquet E., Pisch A., Bernard C., Grosse P., Faure C., Basset G., and Grange Y. Mater. Sci. Eng. B 61-62 (1999) 18
6. Schulz D., Lechner M., Rost H.-J., Siche D., and Wollweber J. Mater. Sci. Forum 433-436 (2003) 17-20 Proceedings of the Fourth European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden
7. Balkas C.M., Maltsev A.A., Roth M.D., Heydemann V.D., Sharma M., and Yushin N.K. Mater. Sci. Forum 389-393 (2002) 59-62 Proceedings of the Ninth International Conference on Silicon Carbide and Related Materials, October 27-November 2, 2001, Tsukuba, Japan
8. Wang S., Sanchez E.M., Kopec A., Poplawski S., Ware R., Holmes S., Balkas C.M., and Timmerman A.G. Mater. Sci. Forum 389-393 (2002) 35-38 Proceedings of the Ninth International Conference on Silicon Carbide and Related Materials, October 27-November 2, 2001, Tsukuba, Japan
9. Nishizawa S.I., Kato T., Kitou Y., Oyanagi N., Hirose F., Yamaguchi H., Bahng W., and Arai K. Mater. Sci. Forum 457-460 (2004) 29
10. Karpov S.Yu., Kulik A.V., Zhmakin I.A., Makarov Yu.N., Mokhov E.N., Ramm M.G., Ramm M.S., Roenkov A.D., and Vodakov Yu.A. J. Crystal Growth 211 (2000) 347
11. Ma R., Zhang H., Prasad V., and Dudley M. Cryst. Growth Des. 2 3 (2002) 213
12. Klein O., Philip P., and Sprekels J. Interfaces Free Boundaries 6 (2004) 295
13. Meziere J., Pons M., Di Cioccio L., Blanquet E., Ferret P., Dedulle J.M., Baillet F., Pernot E., Anikin M., Madar R., and Billon T. J. Phys. Condens. Matter 16 (2004) S1579
14. Meyer C., and Philip P. Cryst. Growth Des. 5 3 (2005) 1145
15. P. Philip, Transient numerical simulation of sublimation growth of SiC bulk single crystals. Modeling, finite volume method, results, Ph.D. Thesis, Department of Mathematics, Humboldt University of Berlin, Germany, 2003. Report No. 22, Weierstrass Institute for Applied Analysis and Stochastics (WIAS), Berlin, available at 〈http://www.wias-berlin.de/publications/reports/22/wias_reports_22.pdf〉.
16. Klein O., Philip P., Sprekels J., and Wilmański K. J. Crystal Growth 222 4 (2001) 832
17. Klein O., and Philip P. IEEE Trans. Magn. 38 3 (2002) 1519
18. Klein O., and Philip P. Math. Models Methods Appl. Sci. 15 2 (2005) 227
19. J. Geiser, O. Klein, P. Philip, Numerical simulation of heat transfer in materials with anisotropic thermal conductivity: A finite volume scheme to handle complex geometries, Preprint No. 2046, Institute for Mathematics and its Applications (IMA), Minneapolis, 2005; Preprint No. 1033, Weierstrass Institute for Applied Analysis and Stochastics (WIAS), Berlin, 2005, submitted for publication. Available at 〈http://www.ima.umn.edu/preprints/may2005/2046.pdf〉.
20. J. Geiser, O. Klein, P. Philip, WIAS-HiTNIHS: Software-tool for simulation in sublimation growth for SiC single crystal: application and methods, in: Proceedings of the International Congress of Nanotechnology, San Francisco, November 7-10, 2004. Available at 〈http://www.ianano.org/Proceeding/Geiser.pdf〉.
21. Dupret F., Nicodéme P., Ryckmans Y., Wouters P., and Crochet M.J. Int. J. Heat Mass Transfer 33 9 (1990) 1849
22. J. Fuhrmann, T. Koprucki, H. Langmach in: W. Hackbusch, G. Wittum (Eds.), Proceedings of the 14th GAMM Seminar on Concepts of Numerical Software, Kiel, January 23-25, 1998, University of Kiel, Kiel, Germany, 2001.
23. Shewchuk J. First Workshop on Applied Computational Geometry. Philadelphia, Pennsylvania (1996), ACM 124
24. Schenk O., Gärtner K., and Fichtner W. Behav. Inf. Technol. 40 1 (2000) 158
25. Schenk O., and Gärtner K. J. Future Gener. Comput. Syst. 20 3 (2004) 475
26. Klein O., and Philip P. J. Crystal Growth 247 1-2 (2003) 219
27. Klein O., and Philip P. J. Crystal Growth 249 3-4 (2003) 514