Transient temperature phenomena during sublimation growth of silicon carbide single crystals

Journal of Crystal Growth

Volumn 249, Issue 3-4, 2003, Pages 514-522

  Klein, Olaf ^a   Philip, Peter ^a  

^a WEIERSTRASS INSTITUTE FOR APPLIED ANALYSIS AND STOCHASTICS   (Germany)

Author keywords

A1. Computer simulation; A1. Heat transfer; A2. Growth from vapor; A2. Single crystal growth; B2. Semiconducting silicon compounds

Indexed keywords

COMPUTER SIMULATION; HEAT CONDUCTION; HEAT RADIATION; MATHEMATICAL MODELS; SILICON CARBIDE; SINGLE CRYSTALS; SUBLIMATION;

GROWTH FROM VAPORS;

CRYSTAL GROWTH;

EID: 0037365049     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02320-5     Document Type: Article

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