Modeling and simulation of sublimation growth of SiC bulk single crystals

Interfaces and Free Boundaries

Volumn 6, Issue 3, 2004, Pages 295-314

  Klein, Olaf ^a   Philip, Peter ^a   Sprekels, Jürgen ^a  

^a WEIERSTRASS INSTITUTE FOR APPLIED ANALYSIS AND STOCHASTICS   (Germany)

Author keywords

Diffuse gray radiation; Finite volume scheme; Modeling; Nonlocal interface conditions; Numerical solution; Physical vapor transport; SiC single crystal

Indexed keywords

EID: 4944249680     PISSN: 14639963     EISSN: None     Source Type: Journal    
DOI: 10.4171/IFB/101     Document Type: Article

References (23)

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