Distribution of threading dislocations in epitaxial lateral overgrowth GaN by hydride vapor-phase epitaxy using mixed carrier gas of H2 and N2

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 1, 2002, Pages 75-76

  Bohyama, Shinya ^a   Yoshikawa, Kenji ^a   Naoi, Hiroyuki ^a   Miyake, Hideto ^a   Hiramatsu, Kazumasa ^a   Iyechika, Yasushi ^b   Maeda, Takayosi ^b  

^a MIE UNIVERSITY   (Japan)

^b SUMITOMO CHEMICAL CO LTD   (Japan)

Author keywords

Cathodoluminescence (CL); Epitaxial lateral overgrowth (ELO); GAN; HCl vapor phase etching; Hydride vapor phase epitaxy (HVPE)

Indexed keywords

CATHODOLUMINESCENCE; DISLOCATIONS (CRYSTALS); ETCHING; GALLIUM NITRIDE; HYDROGEN; NITROGEN; VAPOR PHASE EPITAXY;

EPITAXIAL LATERAL OVERGROWTH (ELO); HYDRIDE VAPOR-PHASE EPITAXY (HVPE);

SEMICONDUCTING GALLIUM;

EID: 0036314552     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.75     Document Type: Article

References (11)