SCOPUS 정보 검색 플랫폼

Volumn , Issue 7, 2003, Pages 2181-2184

Effect of Al content on the microstructure in GaN grown on Si by MOVPE

Author keywords

[No Author keywords available]

Indexed keywords

AL CONTENT; AL-CONCENTRATION; DIFFERENT LAYERS; DISLOCATION DENSITIES; III-NITRIDE; SI(111) SUBSTRATE;

GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; SECONDARY ION MASS SPECTROMETRY; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM;

EID: 34249887022 PISSN: 16101634 EISSN: None Source Type: Conference Proceeding
DOI: 10.1002/pssc.200303337 Document Type: Conference Paper

Times cited : (1)

References (12)

1
- 0000100475
- P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra Appl. Phys. Lett. 73, 975 (1998).
- (1998) Appl. Phys. Lett. , vol.73 , pp. 975
- Kozodoy, P.¹ Ibbetson, J.P.² Marchand, H.³ Fini, P.T.⁴ Keller, S.⁵ Speck, J.S.⁶ DenBaars, S.P.⁷ Mishra, U.K.⁸

2
- 0037449316
- Sergey Yu. Karpov and Yuri N. Makarov, Appl. Phys. Lett. 81, 4721 (2002).
- (2002) Appl. Phys. Lett. , vol.81 , pp. 4721
- Karpov, S.Y.¹ Makarov, Y.N.²

3
- 0032598144
- H. Lahrèche, P. Venneéguès, B. Beaumont, and P. Gibart, J. Cryst. Growth 205, 245 (1999).
- (1999) J. Cryst. Growth , vol.205 , pp. 245
- Lahrèche, H.¹ Venneéguès, P.² Beaumont, B.³ Gibart, P.⁴

4
- 0033229238
- H. Amano, M. Iwaya, N. Hayashi, T. Kashima, S. Nitta, and I. Akasaki, phys. stat. sol. (b) 216, 683 (1999).
- (1999) Phys. Stat. Sol. (b) , vol.216 , pp. 683
- Amano, H.¹ Iwaya, M.² Hayashi, N.³ Kashima, T.⁴ Nitta, S.⁵ Akasaki, I.⁶

5
- 0034244741
- Satoru Tanaka, Misaichi Takeuchi, and Yoshinobu Aoyagi, Jpn. J. Appl. Phys. 39, L831 (2000).
- (2000) Jpn. J. Appl. Phys. , vol.39
- Tanaka, S.¹ Takeuchi, M.² Aoyagi, Y.³

6
- 0037421403
- A. Dadgar, M. Poschenrieder, A. Reiher, J. Blasing, J. Christen, A. Krtschil, T. Finger, T. Hempel, A. Diez, and A. Krost, Appl. Phys. Lett. 82, 28 (2003).
- (2003) Appl. Phys. Lett. , vol.82 , pp. 28
- Dadgar, A.¹ Poschenrieder, M.² Reiher, A.³ Blasing, J.⁴ Christen, J.⁵ Krtschil, A.⁶ Finger, T.⁷ Hempel, T.⁸ Diez, A.⁹ Krost, A.¹⁰

7
- 0000464763
- F. R. Chien, X. J. Ning, S. Stemmer, P. Pirouz, M. D. Bremser, and R. F. Davis, Appl. Phys. Lett. 68, 2678 (1996).
- (1996) Appl. Phys. Lett. , vol.68 , pp. 2678
- Chien, F.R.¹ Ning, X.J.² Stemmer, S.³ Pirouz, P.⁴ Bremser, M.D.⁵ Davis, R.F.⁶

8
- 0000392520
- X. H. Wu, L. M. Brown, D. Kapolnek, S. Keller, B. Keller, S. P. DenBaars, and J. S. Speck, J. Appl. Phys. 80, 3228 (1996).
- (1996) J. Appl. Phys. , vol.80 , pp. 3228
- Wu, X.H.¹ Brown, L.M.² Kapolnek, D.³ Keller, S.⁴ Keller, B.⁵ DenBaars, S.P.⁶ Speck, J.S.⁷

9
- 0003685207
- edited by J. P. Edgar INSPEC, London
- S. Porowski and I. Grzegory, "Phase diagram of AlN." Properties of Group III Nitrides, edited by J. P. Edgar (INSPEC, London 1994).
- (1994) "Phase Diagram of AlN." Properties of Group III Nitrides
- Porowski, S.¹ Grzegory, I.²

10
- 0037449275
- O. Contreras, F. A. Ponce, J. Christen, A. Dadgar, and A. Krost, Appl. Phys. Lett. 81, 4712 (2002).
- (2002) Appl. Phys. Lett. , vol.81 , pp. 4712
- Contreras, O.¹ Ponce, F.A.² Christen, J.³ Dadgar, A.⁴ Krost, A.⁵

11
- 4244062942
- J. H. Mazur, M. Benamara, Z. Liliental-Weber, W. Swider, J. Washburn, C. J. Eiting, and R. D. Dupuis, MRS Internet J. Nitride Semicond. Res. 5S1, W3.77 (2000).
- (2000) MRS Internet J. Nitride Semicond. Res. , vol.5 S1
- Mazur, J.H.¹ Benamara, M.² Liliental-Weber, Z.³ Swider, W.⁴ Washburn, J.⁵ Eiting, C.J.⁶ Dupuis, R.D.⁷

12
- 0001331365
- E. Monroy, F. Calle, J. L. Pau, F. J. Sanchez, and E. Munoz, J. Appl. Phys. 88, 2081 (2000).
- (2000) J. Appl. Phys. , vol.88 , pp. 2081
- Monroy, E.¹ Calle, F.² Pau, J.L.³ Sanchez, F.J.⁴ Munoz, E.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.