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Volumn , Issue , 2004, Pages 26-28

A physics based analytical solution to undoped cylindrical surrounding-gate (SRG) MOSFETs

Author keywords

Compact modeling; Cylindrical surrounding gate; Device physics; MOSFETs; Non classical CMOS

Indexed keywords

COMPACT MODELING; CYLINDRICAL SURROUNDING-GATE; DEVICE PHYSICS; MOSFETS; NON-CLASSICAL CMOS;

EID: 28444453589     PISSN: 15416275     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (16)

References (9)
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    • IEEE , vol.EDL-21 , Issue.5 , pp. 245-247
    • Taur1
  • 4
    • 0035423513 scopus 로고    scopus 로고
    • Pi-gate SOI MOSFET
    • Jong-Tae Park, J.P.Collinge, and Carlos H Diaz, "Pi-gate SOI MOSFET". IEEE EDL-22, No.8, pp. 405-406.
    • IEEE , vol.EDL-22 , Issue.8 , pp. 405-406
    • Park, J.-T.1    Collinge, J.P.2    Diaz, C.H.3
  • 5
    • 85008018770 scopus 로고    scopus 로고
    • Analytical description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs
    • Sang-Huun Oh, Don Monore, and J.M.Hergenrother, "Analytical description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs". IEEE, EDL-21, No.9, pp. 445-447, 2000.
    • (2000) IEEE , vol.EDL-21 , Issue.9 , pp. 445-447
    • Oh, S.-H.1    Monore, D.2    Hergenrother, J.M.3
  • 6
    • 0031079417 scopus 로고    scopus 로고
    • Scaling theory for cylindrical, fully-depleted. Surrounding-gate MOSFETs
    • C.P.Auth and J.D.Plmmer, "Scaling theory for cylindrical, fully-depleted. Surrounding-gate MOSFETs". IEEE EDL-18, No.2, pp. 74-76.
    • IEEE , vol.EDL-18 , Issue.2 , pp. 74-76
    • Auth, C.P.1    Plmmer, J.D.2
  • 7
    • 0032068168 scopus 로고    scopus 로고
    • An analytical surrounding gate MOSFET model
    • S.LJang and S.S.Liu, "An analytical surrounding gate MOSFET model." Solid State Electronics, vol.42, No.5, pp.721-726, 1998.
    • (1998) Solid State Electronics , vol.42 , Issue.5 , pp. 721-726
    • Jang, S.L.1    Liu, S.S.2
  • 8
    • 0031187306 scopus 로고    scopus 로고
    • An accurate model of fullydepleted surrounding gate transistor
    • T.Endoh, T.Nakamura, and F.Masuoka, "An accurate model of fullydepleted surrounding gate transistor.". IEICE Trans Electron, E80-C, No.7, pp.905-910.
    • IEICE Trans Electron , vol.E80-C , Issue.7 , pp. 905-910
    • Endoh, T.1    Nakamura, T.2    Masuoka, F.3
  • 9
    • 0001474744 scopus 로고
    • On the solution of the Poisson-Boltzamnn equation with application to the theory of thermal explosions
    • Nov.
    • P.L.Chambere, "On the solution of the Poisson-Boltzamnn equation with application to the theory of thermal explosions". The Journal of Chemical Physics, vol.20. Nov., pp.1795-1797, 1952.
    • (1952) The Journal of Chemical Physics , vol.20 , pp. 1795-1797
    • Chambere, P.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.