Quantitative simulation of in situ reflectance data from metal organic vapour phase epitaxy of GaN on sapphire

Semiconductor Science and Technology

Volumn 22, Issue 6, 2007, Pages 629-635

  Liu, Chaowang ^a,b   Watson, Ian M ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b University of Bath   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; GALLIUM NITRIDE; LIGHT SCATTERING; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; WAVELENGTH;

IN SITU REFLECTOMETRY; ORGANIC VAPOUR PHASE EPITAXY; QUANTITATIVE SIMULATION; ROUGH SURFACES;

THIN FILMS;

EID: 34249668839     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/6/008     Document Type: Article

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