Effect of Si Co doping on ferromagnetic properties of GaGdN

Journal of Electronic Materials

Volumn 36, Issue 4, 2007, Pages 391-396

  Hite, J K ^a   Frazier, R M ^a   Davies, R P ^a   Thaler, G T ^a   Abernathy, C R ^a   Pearton, S J ^a   Zavada, J M ^b   Brown, E ^c   Hommerich U ^c  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b U S ARMY RESEARCH OFFICE   (United States)

^c HAMPTON UNIVERSITY   (United States)

Author keywords

AlN; GaN; Spintronics

Indexed keywords

GAS SOURCE; NITROGEN PLASMA; ROOM-TEMPERATURE FERROMAGNETISM; SAPPHIRE SUBSTRATES;

COBALT; FERROMAGNETISM; MAGNETIC MOMENTS; MOLECULAR BEAM EPITAXY; PLASMAS; SEMICONDUCTING GALLIUM; SILICON; SQUIDS;

SEMICONDUCTOR DOPING;

EID: 34249109512     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0040-1     Document Type: Conference Paper

References (29)

1. S. von Molnar, J. Superconductivity: Incorporating Novel Magnetism 16, 1 (2003).
2. S.A. Wolf, D.D. Awschalom, R.A. Buhrman, J.M. Daughton, S. von Molnar, M.L. Roukes, A.Y. Chtchelkanova, and D.M. Treger, Science 294, 1488 (2001).
3. S. Von Molnar and D. Read, J. Magn. Mag, Mater 242-245, 13 (2002).
4. S.J. Pearton, et al., J. Appl. Phys. 93, 1 (2003).
5. M.L. Reed, N.A. El-Masry, H.H. Stadelmaier, M.E. Ritums, N.J. Reed, C.A. Parker, J.C. Roberts, and S.M. Bedair, Appl. Phys. Lett. 79, 3473 (2001).
6. G.T. Thaler, et al., Appl. Phys. Lett. 80, 3964 (2002).
7. G.T. Thaler, R.M. Frazier, C.R. Abernathy, and S.J. Pearton, Appl. Phys. Lett. 86, 131901 (2005).
8. H. Asahi, Y.K. Zhou, M. Hashimoto, M.S. Kim, X.J. Li, S. Emura, and S. Hasegawa, J. Phys.: Condens, Matter 16, S5555 (2004).
9. N. Teraguchi, A. Suzuki, Y. Nanishi, Y.-K. Zhou, M. Hashimoto, and H. Asahi, Solid State Commun. 122, 651 (2002).
10. I. Zutic, J. Fabian, and S.D. Sarma, Rev. Mod. Phys. 76, 323 (2004).
11. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, Science 287, 1019 (2000).
12. K.H. Kim, K.J. Lee, D.J. Kim, H.J. Kim, Y.E. Ihm, D. Djayaprawira, M. Takahashi, C.S. Kim, C.G. Kim, and S.H. You, Appl. Phys. Lett. 82, 1775 (2003).
13. Y.L. So, G. Kioseoglou, S. Kim, S. Huang, Y.H. Koo, S. Kuwarbara, S. Owa, T. Kondo, and H. Munekata, Appl. Phys. Lett. 79, 3926 (2001).
14. S. Kuwabara, T. Kondo, T. Chikyou, P. Ahmet, H. Munekata, Jpn. J. Appl. Phys. 40, L724 (2001).
15. G.T. Thaler, et al., Appl. Phys. Lett. 80, 4357 (2002).
16. H. Hori, S. Sonoda, T. Sasaki, Y. Yamamoto, S. Shimizu, K. Suga, and K. Kindo, Physica B324, 142 (2002).
17. S. Dhar, O. Brandt, A. Trampert, L. Daweritz, K.J. Friedland, K.H. Ploog, J. Keller, B. Beschoten, and G. Guntherhold, Appl. Phys. Lett. 82, 2077 (2003).
18. M.C. Park, K.S. Huh, J.M. Hyong, J.M. Lee, J.Y. Chung, K.I. Lee, S.H. Han, and W.Y. Lee, Solid-State Commun 124, 11 (2002).
19. I.A. Buyanova, et al., J. Electron. Mater 33, 467 (2004).
20. I.A. Buyanova, et al.,Appl. Phys. Lett. 84, 2599 (2004).
21. S. Dhar, O. Brandt, M. Ramsteiner, V.F. Sapega, and K.H. Ploog, Phys. Rev. Lett. 94, 037205 (2005).
22. S.Y. Han, et al., Appl. Phys. Lett. 88, 042102 (2006).
23. G. M. Dalpian, and S.-H. Wei, Phys. Rev. B 72, 115201 (2005).
24. G.T. Thaler, R.M. Frazier, B.P. Gila, J. Stapleton, M. Davidson, C.R. Abernathy, S.J. Pearton, and C. Segre, Appl. Phys. Lett. 84, 2578 (2004).
25. S. Dhar, T. Kammermeier, A. Ney, L. Perez, K. Ploog, A. Melnikov, and A.D. Wieck, Appl. Phys. Lett. 89, 062503 (2006).
26. S.J. Pearton, D.P. Norton, R. Frazier, S.Y. Han, C.R. Abernathy, and J.M. Zavada, IEE Proc.-Circuits, Devices Systems 152, 312 (2005).
27. R. Frazier, G.T. Thaler, J.Y. Leifer, J.K. Hite, B.P. Gila, C.R. Abernathy, and S.J. Pearton, Appl. Phys. Lett. 86, 052101 (2005).
28. A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, R.M. Frazier, J.Y. Liefer, G.T. Thaler, C.R. Abernathy, S.J. Pearton, and J.M. Zavada, J. Vac. Sci. Technol 22, 2758 (2004).
29. A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, R.M. Frazier, J.Y. Liefer, G.T. Thaler, C.R. Abernathy, S.J. Pearton, and J.M. Zavada, Appl. Phys. Lett. 85, 4067 (2004).