Effect of Si Co doping on ferromagnetic properties of GaGdN

Journal of Electronic Materials

Volumn 36, Issue 4, 2007, Pages 391-396

  Hite, J K ^a   Frazier, R M ^a   Davies, R P ^a   Thaler, G T ^a   Abernathy, C R ^a   Pearton, S J ^a   Zavada, J M ^b   Brown, E ^c   Hommerich U ^c  

^a University of Florida   (United States)

^b U S ARMY RESEARCH OFFICE   (United States)

^c HAMPTON UNIVERSITY   (United States)

Author keywords

AlN; GaN; Spintronics

Indexed keywords

GAS SOURCE; NITROGEN PLASMA; ROOM-TEMPERATURE FERROMAGNETISM; SAPPHIRE SUBSTRATES;

COBALT; FERROMAGNETISM; MAGNETIC MOMENTS; MOLECULAR BEAM EPITAXY; PLASMAS; SEMICONDUCTING GALLIUM; SILICON; SQUIDS;

SEMICONDUCTOR DOPING;

EID: 34249109512     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0040-1     Document Type: Conference Paper

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