Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes

Journal of Electronic Materials

Volumn 33, Issue 5, 2004, Pages 467-471

  Buyanova, I A ^a   Izadifard, M ^a   Storasta, L ^a   Chen, W M ^a   Kim, Jihyun ^b   Ren, F ^b   Thaler, G ^b   Abernathy, C R ^b   Pearton, S J ^b   Pan, C C ^c   Chen, G T ^c   Chyi, J I ^c   Zavada, J M ^d  

^a LINKÖPING UNIVERSITY   (Sweden)

^b University of Florida   (United States)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^d U S ARMY RESEARCH OFFICE   (United States)

Author keywords

(Ga,Mn)N InGaN; Light emitting diode (LED); Molecular beam epitaxy (MBE); Multiquantum well (MQW)

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; LIGHT EMISSION; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; OPTICAL PUMPING; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM WELLS;

MULTIQUANTUM WELLS (MQW); OPTICAL INJECTION; SINGLE-PHASE FERROMAGNETICS; SPIN ORIENTATION;

LIGHT EMITTING DIODES;

EID: 2442675717     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0204-9     Document Type: Conference Paper

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