Room temperature ferromagnetic (Ga,Mn)N epitaxial films with low Mn concentration grown by plasma-enhanced molecular beam epitaxy

Solid State Communications

Volumn 124, Issue 1-2, 2002, Pages 11-14

  Park, M C ^a   Huh, K S ^a   Myoung, J M ^a   Lee, J M ^b   Chang, J Y ^b   Lee, K I ^b   Han, S H ^b   Lee, W Y ^b  

^a Yonsei University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

A. (Ga,Mn)N; A. Diluted magnetic semiconductor; A. Wide bandgap ferromagnetic semiconductor; B. Plasma enhanced molecular beam epitaxy

Indexed keywords

CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; FILM GROWTH; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; SEMICONDUCTING FILMS;

EPITAXIAL FILMS;

FERROMAGNETIC MATERIALS;

EID: 0036749557     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(02)00471-4     Document Type: Article

References (18)

1. Ohno H. Science. 281:1998;951.
2. Wolf S.A., Awschalom D.D., Buhrman R.A., Daughton J.M., von Molnar S., Roukes M.L., Chtchelkanova A.Y., Treger D.M. Science. 294:2001;1488.
3. Ohno H., Shen A., Matsukura F., Oiwa A., Endo A., Katsumoto S., Iye Y. Appl. Phys. Lett. 69:1996;363.
4. Potashnik S.J., Ku K.C., Chun S.H., Berry J.J., Samarth N., Schiffer P. Appl. Phys. Lett. 79:2001;1495.
5. Oiwa A., Slupinski T., Munekata H. Appl. Phys. Lett. 78:2001;518.
6. Ohno H. J. Vac. Sci. Technol. B18:2000;2039.
7. Park Y.D., Hanbicki A.T., Erwin S.C., Hellberg C.S., Sullivan J.M., Mattson J.E., Ambrose T.F., Wilson A., Spanos G., Jonker B.T. Science. 295:2002;651.
8. Dietl T., Ohno H., Matsukura F., Cibert J., Ferrand D. Science. 287:2000;1019.
9. Reed M.K., El-Masry N.A., Stadelmaier H.H., Ritums M.K., Reed M.J., Parker C.A., Roberts J.C., Bedair S.M. Appl. Phys. Lett. 79:2001;3473.
10. Sonoda S., Shimizu S., Sasaki T., Yamamoto Y., Hori H. J. Cryst. Growth. 237-239:2002;1358.
11. Thaler G.T., Overberg M.E., Gila B., Frazier R., Abernathy C.R., Pearton S.J., Lee J.S., Lee S.Y., Park Y.D., Khim Z.G., Kim J., Ren F. Appl. Phys. Lett. 80:2002;3964.
12. Tarsa E.J., Heying B., Wu X.H., Fini P., DenBaars S.P., Speck J.S. J. Appl. Phys. 82:1997;5472.
13. J.Y. Chang, G.H. Kim, J.M. Lee, K.I. Lee, S.H. Han, W.Y. Lee, M.C. Park, K.S. Huh, J.M. Myoung, J. Appl. Phys. submitted for publication.
14. Abe E., Matsukura F., Yasuda H., Ohno Y., Ohno H. Physica E. 7:2000;981.
15. Lee J.M., Jung J.K., Lim S.H. J. Magn. Magn. Mater. 234:2001;133.
16. Bhatt R.N., Berciu M., Kennett M.P., Wan X., arxiv: cond-mat/0111184 v19 November 2001.
17. Overberg M.E., Abernathy C.R., Pearton S.J., Theodoropoulou N.A., McCarthy K.T., Hebard A.F. Appl. Phys. Lett. 79:2001;1312.
18. Iye Y., Oiwa A., Endo A., Katsumoto S., Matsukura F., Shen A., Ohno H., Munekat H. Mater. Sci. Engng. B63:1999;88.