Core level photoemission study of nitrided hafnium silicate thin films

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2302-2305

  Barrett, N ^a   Renault, O ^b   Besson, P ^b   Le Tiec, Y ^b   Martin, F ^b   Calvat, F ^a  

^a CEA SACLAY   (France)

^b CEA LETI   (France)

Author keywords

Gate oxide; Hafnium silicate; Photoemission; Synchrotron radiation

Indexed keywords

ETCHING; HAFNIUM COMPOUNDS; NITRIDING; NITROGEN; PHOTOEMISSION; SILICATES; SYNCHROTRON RADIATION;

GATE OXIDES; HAFNIUM SILICATE; OXIDE THICKNESS;

THIN FILMS;

EID: 34248664713     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.131     Document Type: Article

References (13)

1. Toyoda S., Okabayashi J., Kumigashira H., Oshima M., Ono K., Niwa M., Usuda K., and Liu G.L. Appl. Phys. Lett. 84 (2004) 2328-2330
2. Visokay M.R., Chambers J.J., Rotondaro A.L.P., Shanware A., and Colombo L. Appl. Phys. Lett. 80 (2002) 3183-3185
3. Koyama M., Kaneko A., Io T., Koike M., Kamata Y., Iijima R., Kamimuta Y., Takashima A., Suzuki M., Hongo C., Inumiya S., Takayanagi M., and Nishiyama A. IEEE IEDM (2002) 849-852
4. Shang G., Peacock P.W., and Robertson J. Appl. Phy. Lett. 84 (2004) 106
5. Morais J., Miotti L., Bastos K.P., Teixeira S.R., Baumvol I.J.R., Rotondaro A.L.P., Chambers J.J., Visokay M.R., Colombo L., and Matrins Alves M.C. Appl. Phys. Lett. 86 (2005) 212906
6. Chang J.P., Green M.L., Donnelly V.M., Opila R.L., Eng Jr. J., Sapjeta J., Silverman P.J., Weir B., Lu H.C., Gustafsson T., and Garfunkel E. J. Appl. Phys. 87 (2000) 4449
7. Pant G., Punchaipetch P., Kim M.J., Wallace R.M., and Gnade B.E. Thin Solid Films 460 (2004) 242-246
8. Akbar M.S., Gopalan S., Cho H.-J., Onishi K., Choi R., Nieh R., Kang C.S., Kim Y.H., Han J., Krishnan S., and Lee J.C. Appl. Phys. Lett. 82 (2003) 1757-1759
9. Barrett N.T., Renault O., Besson P., Le Tiec Y., and Martin F. Appl. Phys. Lett. 88 (2006) 162906
10. Bhat M., Ahn J., Kwong D.L., Arendt M., and White J.M. Appl. Phys. Lett. 64 (1994) 1168-1170
11. Himpsel F.J., McFeely F.R., Taleb-Ibrahimi A., Yarmoff J.A., and Hollinger G. Phys. Rev. B 38 (1988) 6084-6096
12. Giustino F., Buongiorno A., and Pasquarello A. Appl. Phys. Lett. 81 (2002) 4233-4235
13. Kato H., Nango T., Miyagawa T., Katagiri T., Seol K.S., and Ohki Y. J. Appl. Phys. 92 (2002) 1106-1111