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Physica Status Solidi C: Conferences

Volumn 3, Issue 4, 2006, Pages 946-951

Electrical properties of ZnO/GaN heterostructures and photo-responsvity of ZnO layers

(6) Oh, D C a,b Suzuki, T a,b Makino, H c Hanada, T a Ko, H J d Yao, T a,b

a TOHOKU UNIVERSITY (Japan)

b TOHOKU UNIVERSITY (Japan)

c KOCHI UNIVERSITY OF TECHNOLOGY (Japan)

d Korea Photonics Technology Institute (KOPTI) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; GALLIUM NITRIDE; HETEROJUNCTIONS; PHOTOSENSITIVITY; SCHOTTKY BARRIER DIODES; ULTRAVIOLET DETECTORS; ZINC OXIDE;

CAPACITANCE-VOLTAGE CURVES; GAN HETEROSTRUCTURES; PHOTOSIGNALS;

ZINC OXIDE; ELECTRIC PROPERTIES;

73.40.KP; CAPACITANCE-VOLTAGE CURVE; DIODE CHARACTERISTICS; HETERO INTERFACES; HETEROJUNCTION TRANSISTORS; HIGH-ELECTRON-DENSITY; PHOTORESPONSIVITY; ULTRA-VIOLET PHOTODETECTORS;

EID: 33646178960 PISSN: 16101634 EISSN: None Source Type: Conference Proceeding
DOI: 10.1002/pssc.200564758 Document Type: Conference Paper

Times cited : (17)

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