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Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 703-706

Local p-type conductivity in n-GaN and n-ZnO layers due to inhomogeneous dopant incorporation

(6) Krtschil, A a Look, D C b,c Fang, Z Q b,c Dadgar, A a Diez, A a Krost, A a

a OTTO VON GUERICKE UNIVERSITY (Germany)

b WRIGHT STATE UNIVERSITY (United States)

c AIR FORCE RESEARCH LABORATORY (United States)

Author keywords

Conductivity domains; Defects; Mixed conductivity; p Type ZnO

Indexed keywords

CAPACITANCE; DEFECTS; DOPING (ADDITIVES); GALLIUM; GRAIN BOUNDARIES; MATRIX ALGEBRA; MICROMETERS; MICROSCOPIC EXAMINATION; NITROGEN; TOPOLOGY; ZINC OXIDE;

CONDUCTIVITY DOMAINS; DOPANT INCORPORATION; INHOMOGENEOUS DOPANT INCORPORATION; MIXED CONDUCTIVITY; N-GAN AND N-ZNO LAYERS; P-TYPE CONDUCTIVITY; P-TYPE ZNO; SCANNING CAPACITANCE MICROSCOPY (SCM) INVESTIGATIONS;

GALLIUM NITRIDE;

EID: 33645166197 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/j.physb.2005.12.176 Document Type: Conference Paper

Times cited : (16)

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