Reliability issues for nano-scale CMOS dielectrics

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 1910-1916

  Ribes, G ^a   Rafik, M ^a,b   Roy, D ^a  

^a STMICROELECTRONICS   (France)

^b IMEP LAHC   (France)

Author keywords

Circuits; Dielectrics breakdown; High k, NBTI, PBTI

Indexed keywords

COST REDUCTION; CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; GATE DIELECTRICS; PERMITTIVITY; RELIABILITY ANALYSIS;

DESIGN RULES; HIGH-K GATE DIELECTRICS; VOLTAGE OVERSHOOTS;

CMOS INTEGRATED CIRCUITS;

EID: 34248656754     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.077     Document Type: Article

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