Characterization of Vt instability in hafnium based dielectrics by pulse gate voltage techniques

ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference

Volumn , Issue , 2004, Pages 89-92

  Ribes, G ^a,b   Muller M ^d   Bruyere S ^a   Roy, D ^a   Denais, M ^a,c   Huard, V ^d   Skotnicki, T ^a   Ghibaudo, G ^b  

^a STMICROELECTRONICS   (France)

^b Grenoble INP Phelma   (France)

^c AIX MARSEILLE UNIVERSITÉ   (France)

^d NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CMOS INTEGRATED CIRCUITS; DATA ACQUISITION; ELECTRIC FIELDS; FERMI LEVEL; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PARAMAGNETIC RESONANCE; REACTION KINETICS; SILICA; THRESHOLD VOLTAGE; TRANSISTORS;

BOLTZMANN CONSTANTS; DETRAPPING PHENOMENON; PULSED GATE VOLTAGE TECHNIQUES; STANDARD DEVIATIONS;

DIELECTRIC MATERIALS;

EID: 17644388512     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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