Investigation of localized breakdown spots in thin SiO2 using scanning capacitance microscopy

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 622-623

  Wang, S D ^a   Chang, M N ^b   Chen, C Y ^b   Lei, T F ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Atomic force microscopy (AFM); Breakdown spots; Oxide breakdown; Scanning capacitance microscopy (SCM)

Indexed keywords

BREAKDOWN SPOTS; CAPACITANCE SIGNALS; OXIDE BREAKDOWN; SCANNING CAPACITANCE MICROSCOPY (SCM);

APPROXIMATION THEORY; ATOMIC FORCE MICROSCOPY; ELECTRIC BREAKDOWN; MORPHOLOGY; OPTICAL MICROSCOPY; SCANNING; SIGNAL PROCESSING; SILICA;

CAPACITANCE;

EID: 28744456739     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

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