Role of atomic nitrogen during GaN growth by plasma-assisted molecular beam epitaxy revealed by appearance mass spectrometry

Applied Physics Letters

Volumn 90, Issue 17, 2007, Pages

  Osaka, J ^a   Kumar, M Senthil ^a,b   Toyoda, H ^a   Ishijima, T ^a   Sugai, H ^a   Mizutani, T ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; GALLIUM NITRIDE; MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY; NITROGEN; SEMICONDUCTOR GROWTH;

ATOMIC NITROGEN; NITROGEN FLUXES; RF-PLASMA SOURCES;

CRYSTAL ATOMIC STRUCTURE;

EID: 34248585077     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2734390     Document Type: Article

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