Improvement in reliability of InP-based HEMTs by suppressing impact ionization

Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

Volumn 90, Issue 5, 2007, Pages 33-38

  Hara, Naoki ^a   Okamoto, Naoya ^a   Imanishi, Kenji ^a   Takahashi, Tsuyoshi ^a   Makiyama, Kozo ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Composite channel structure; Double doped structure; Impact ionization; InP based HEMT; Reliability

Indexed keywords

DOPING (ADDITIVES); IMPACT IONIZATION; RELIABILITY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

COMPOSITE CHANNEL STRUCTURE; DOUBLE-DOPED STRUCTURE; ULTRAFAST TRANSISTOR;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34248575707     PISSN: 8756663X     EISSN: None     Source Type: Journal    
DOI: 10.1002/ecjb.20321     Document Type: Article

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