A 100-Gbit/s 2:1 multiplexer in InP HEMT technology

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2003, Pages 1173-1176

  Suzuki, T ^a   Nakasha, Y ^a   Sakoda, T ^a   Sawada, K ^a   Takahashi, T ^a   Makiyama, K ^a   Hirose, T ^a   Takigawa, M ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

IMPEDANCE MATCHING (ELECTRIC); INFORMATION TECHNOLOGY; INTERCONNECTION NETWORKS; PERMITTIVITY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

CUTOFF FREQUENCY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0042593129     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. M. Möller, H.-H. Rein, A. Felder and T. F. Meister, "60Gbit/s time-division multiplexer in SiGe-bipoler technology with special regard to mounting and measuring technique," Electronics Letters, no. 33, pp. 679-680, 1997
2. K. Ishii, K. Murata, M. Ida, K. Kurishima, T. Enoki, T. Shibata and E. Sano, "Very-high-speed selector IC using InP/lnGaAs heterojunction bipolar transistors", Electronics Letters, Vol. 38, No. 10, pp. 480-481, May.2002.
3. K. Murata, K. Sano, H. Kitabayashi, S. Sugitani, H. Sugahara, and T. Enoki "100-Gbit/s Logic IC using 0.1-μm-gate-length InAlAs/InGaAs/InP HEMTs," IEDM 2002 Digest,.
4. A. Endoh, Y. Yamashita, K. Shinohara, K. Hikosaka, T. Matsui, S. Hiyamizu and T. Mimura, "InP-Based HEMTs with a Very Short Gate-Channel Distance", the 2002 International Conference on Solid State Devices and Materials Tech. Dig., pp. 116-117.
5. T. Takahashi, M. Nihei, K. Makiyama, M. Nishi, T. Suzuki, and N. Kara, "Stable and Uniform InAlAs/InGaAs HEMT ICs for 40-Gbit/s Optical Communication Systems," Proceedings of the 2001 IPRM, pp. 614-617