Bias acceleration model of drain resistance degradation in InP-based HEMTs

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2003, Pages 324-328

  Fukai, Yoshino K ^a   Sugitani, Suehiro ^a   Enoki, Takatomo ^a   Kitabayashi, Hiroto ^a   Makimura, Takashi ^a   Yamane, Yasuro ^a   Muraguchi, Masahiro ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Drain resistance increase; E dependence model; InP based HEMTs

Indexed keywords

CURRENT DENSITY; ELECTRIC FIELD EFFECTS; IMPACT IONIZATION; IMPURITIES; PASSIVATION; SEMICONDUCTING INDIUM PHOSPHIDE;

BIAS ACCELERATION MODEL;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0038310019     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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4. D. R. GREENBERG, AND J. A. DEL ALAMO, "NONLINEAR SOURCE AND DRAIN RESISTANCE IN RECESSED-GATE HETEROSTRUCTURE FIELD EFFECT TRANSISTORS",IEEE TRANS. ELECTRON DEVICES, 43 (1996) PP. 1304-1306.
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7. Y. K. FUKAI, T. SUEMITSU, T. MAKIMURA, H. YOKOYAMA AND Y. YAMANE, "SUPPRESSION OF DEGRADATION IN INP-BASED HEMTS BY INSERTING INALP IN CARRIER SUPPLY LAYER," TWHM 00,2000
8. T. SUEMITSU, H. FUSHIMI, S. KODAMA, S. TUNASHIMA AND S. KIMURA; "INFUENCE OF HOLE ACCUMULATION ON THE SOURCE RESISTANCE, KINK EFFECT, AND ON-STATE BREAKDOWN OF INP-BASED HEMT: LIGHT IRRADIATION STUDY", IN PROCEEDINGS OF 2001 INT. CONF. ON INDIUM PHOSPHIDE AND RELATED MATERIALS(13-TH IRPM) 2001 pp.456-459.