Improvement in reliability of InP-based HEMTs by suppressing impact ionization

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2004, Pages 615-618

  Hara, Naoki ^b   Okamoto, Naoya ^b   Imanishi, Kenji ^a   Sawada, Ken ^a   Takahashi, Tsuyoshi ^a,b   Makiyama, Kozo ^a   Takikawa, Masahiko ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; HIGH ELECTRON MOBILITY TRANSISTORS; IMPACT IONIZATION; RELIABILITY THEORY;

BIAS VOLTAGE; CHANNEL STRUCTURE; DRAIN BIAS; ELECTRON TRANSFER;

INDIUM COMPOUNDS;

EID: 23744484244     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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