Influence of 250 keV Ge ions fluence on electrical and optical properties of SiC

Vacuum

Volumn 81, Issue 9, 2007, Pages 1062-1067

  Rafique, M S ^a   Tahir, N ^a,b  

^a UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Pakistan)

^b NATIONAL CENTRE FOR PHYSICS   (Pakistan)

Author keywords

EDX; Laser induced plasma (LIP); Q switched Nd:YAG laser; Raman spectroscopy; Resistivity; SiC

Indexed keywords

DEFECTS; ELECTRIC PROPERTIES; ENERGY DISPERSIVE X RAY ANALYSIS; GERMANIUM; ION SOURCES; OPTICAL PROPERTIES; RAMAN SPECTROSCOPY; X RAY DIFFRACTION;

BRAGG'S LAW; FOUR-PROBE METHOD; LASER-INDUCED PLASMA (LIP); LATTICE DEFECTS; RAMAN BANDS;

SILICON CARBIDE;

EID: 34248221169     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2007.01.062     Document Type: Article

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