Optical properties and chemical structure of ion implanted a-SiC: H

Vacuum

Volumn 63, Issue 4, 2001, Pages 749-753

  Tsvetkova, T ^a   Tzenov, N ^b   Tzolov, M ^b   Dimova Malinovska, D ^b   Adriaenssens, G J ^c   Pattyn, H ^c  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b Central Laboratory of Solar Energy and New Energy Sources   (Bulgaria)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Amorphous semiconductors; Ion implantation; Optical data storage; Silicon carbide

Indexed keywords

AMORPHOUS ALLOYS; HYDROGENATION; INFRARED SPECTROSCOPY; ION IMPLANTATION; MOSSBAUER SPECTROSCOPY; OPTICAL DATA STORAGE; RAMAN SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

OPTICAL TRANSMISSION SPECTRA;

SILICON CARBIDE;

EID: 0035899278     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(01)00269-X     Document Type: Conference Paper

References (13)