The electrical characteristics of silicon carbide alloyed with germanium

Applied Surface Science

Volumn 175-176, Issue , 2001, Pages 505-511

  Katulka, G ^a   Roe, K ^a   Kolodzey, J ^a   Eldridge, G ^b   Clarke, R C ^b   Swann, C P ^c   Wilson, R G ^d  

^a UNIVERSITY OF DELAWARE   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

^c UNIVERSITY OF DELAWARE   (United States)

^d NONE   (United States)

Author keywords

Alloys; Ge; I V characteristics; Implantation; SiC; SiC:Ge

Indexed keywords

ALLOYING; ANNEALING; CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; GERMANIUM; HETEROJUNCTIONS; ION IMPLANTATION; LATTICE CONSTANTS; SUBSTRATES; X RAY DIFFRACTION;

CONTACT RESISTANCE; HETEROJUNCTION PATTERNS;

SILICON CARBIDE;

EID: 0035873443     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00111-8     Document Type: Article

References (5)

1. J. Ziegler, The Stopping and Range of Ions in Solids, Pergamon Press, Oxford, 1985.
2. Doolittle L.R. Nucl. Instrum. Methods Phys. Res. B. 9:1985;344.
3. Katulka G., Guedj C., Kolodzey J., Wilson R.G., Swann C., Tsao M.W., Rabolt J. Appl. Phys. Lett. 74:1999;4.
4. T.N. Oder, J.R. Williams, M.J. Bozack, V. Iyer, S.E. Mohney, J. Crofton, J. Electron. Mater. 27 (4) (1998).
5. J.M. Shannon, Appl. Phys. Lett. 24 (8) (1974).