Electron interferometry in the proximity of amorphous ultrathin Si O2 Si

Applied Physics Letters

Volumn 90, Issue 18, 2007, Pages

  Xue, K ^c   Ho, H P ^c   Xu, J B ^a   Wang, R Z ^b  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^b BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT DENSITY; ELECTRIC CONDUCTANCE; ELECTROMAGNETIC WAVE INTERFERENCE; INTERFEROMETRY; SCANNING TUNNELING MICROSCOPY; ULTRAHIGH VACUUM; ULTRATHIN FILMS;

ELECTRON INTERFEROMETRY; ELECTRON STANDING WAVES (ESW); ELECTRON WAVES; ULTRAHIGH VACUUM SCANNING TUNNELING MICROSCOPES;

AMORPHOUS SILICON;

EID: 34247893998     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2735545     Document Type: Article

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