In situ fabrication and characterization of tungsten nanodots on SiO 2/Si via field induced nanocontact with a scanning tunnelling microscope

Nanotechnology

Volumn 16, Issue 12, 2005, Pages 2993-3000

  Xue, K ^a   Xu, J B ^a   Xi, L ^a   An, J ^a   Chen, J ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSITIONS; SCANNING TUNNELING MICROSCOPY; SILICA; TUNGSTEN;

ELECTRON TRANSPORT; NANOCONTACTS; NANODOTS; TIP APEX VARIATION;

NANOSTRUCTURED MATERIALS;

EID: 27944450286     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/16/12/044     Document Type: Article

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