Transparent ohmic contacts on p-GaN using an indium tin oxide overlayer

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 214-218

  Kim, Soo Young ^a   Jang, Ho Won ^a   Lee, Jong Lam ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION BARRIERS; ELECTRIC CONTACTORS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NICKEL OXIDE; NITRIDES; OHMIC CONTACTS; TIN OXIDES; WIDE BAND GAP SEMICONDUCTORS;

CONTACT RESISTIVITIES; INDIUM TIN OXIDE; OXIDIZING ATMOSPHERE; SPECIFIC CONTACT RESISTIVITY; THERMALLY STABLE OHMIC CONTACTS;

GOLD;

EID: 34247857237     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390026     Document Type: Conference Paper

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