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Volumn 18, Issue 7, 2007, Pages 747-751

High boron incorporation in selective epitaxial growth of SiGe layers

Author keywords

[No Author keywords available]

Indexed keywords

HIGH BORON DOPING; SELECTIVE EPITAXIAL GROWTH (SEG);

BORON; CMOS INTEGRATED CIRCUITS; EPITAXIAL GROWTH; GROWTH RATE; INTEGRATION; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 34247859043 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-007-9121-z Document Type: Article

Times cited : (13)

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