Methods to reduce the loading effect in selective and non-selective epitaxial growth of sigec layers

Materials Science and Engineering: B

Volumn 109, Issue 1-3, 2004, Pages 122-126

  Hallstedt J ^a   Suvar, E ^a   Menon, C ^a   Hellstrom P E ^a   Ostling M ^a   Radamson, H H ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

CVD; Epitaxy; Si; SiGeC

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL MECHANICAL POLISHING; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; DIFFUSION; REDUCTION;

DEFECT DENSITY; SELECTIVE EPITAXIAL GROWTH; SURFACE DIFFUSION;

SILICON COMPOUNDS;

EID: 2342511524     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2003.10.062     Document Type: Conference Paper

References (12)

1. Y. Kiyota, T. Hashimoto, T. Udo, A. Kodama, H. Shimamoto, R. Hayami, K. Washio, BCTM2002, 2002, p. 139.
2. Knoll D., Heinemann B., Ehwald K.-E., Tillack B., Schley P., Osten H.J. Thin Solid Films. 369:2000;342.
3. Y.-C. Yeo, Q. Lu, T.-J. King, C. Hu, T. Kawashima, M. Oishi, S. Mashiro, J. Sakai, in: Proceedings of the International Electronics Device Meeting, 2000, p. 753.
4. Whall T.E., Parker E.H.C. Thin Solid Films. 367:2000;250.
5. Bodnar S., De Berranger E., Bouillon P., Mouis M., Skotnicki T., Regolini J.L. J. Vac. Sci. Technol. 15:1997;712.
6. Menon C., Bentzen A., Radamson H.H. J. Appl. Phys. 90:2001;4805.
7. De Boer W.B., Terpstra D., Van Berkum J.G.M. Mater. Sci. Eng. B. 67:1999;46.
8. Ribot P., Monfray S., Skotnicki T., Dutartre D. Mater. Sci. Eng. B. 89:2002;125.
9. Fellous C., Romagna F., Dutartre D. Mater. Sci. Eng. B. 89:2002;323.
10. Vescan L. Mater. Sci. Eng. B. 28:1994;1.
11. Kamins T.I. J. Appl. Phys. 74:1993;5799.
12. Fewster P.F., Andrew N.L. J. Appl. Phys. 74:1993;3121.