SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium - Proceedings

Volumn 745, Issue , 2002, Pages 117-122

Formation of Ni mono-germanosilicide on heavily B-doped epitaxial SiGe for ultra-shallow source/drain contacts

(5) Isheden, Christian a Seger, Johan a Radamson, Henry H a Zhang, Shi Li a Östling, Mikael a

a ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTS; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; RAPID THERMAL ANNEALING; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; X RAY DIFFRACTION ANALYSIS;

SHEET RESISTANCE; SILICIDATION;

SILICON WAFERS;

EID: 0037617808 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: 10.1557/proc-745-n4.9 Document Type: Conference Paper

Times cited : (7)

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