Charge transfer between semiconducting carbon nanotubes and their doped GaAs(110) and InAs(110) substrates detected by scanning tunnelling spectroscopy

Nanotechnology

Volumn 18, Issue 21, 2007, Pages

  Ruppalt, Laura B ^a   Lyding, Joseph W ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; ULTRAHIGH VACUUM;

ELECTRON TRANSFER; NANOTUBE TRANSFER; ROOM TEMPERATURE; SUBSTRATE LATTICE;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

ARSENIC; CARBON NANOTUBE; GALLIUM; INDIUM;

ARTICLE; ELECTRICITY; ELECTRON TRANSPORT; NANOTECHNOLOGY; PRIORITY JOURNAL; ROOM TEMPERATURE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR; SPECTROSCOPY; SURFACE CHARGE; THEORETICAL MODEL;

EID: 34247859006     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/21/215202     Document Type: Article

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