Ultrahigh-vacuum scanning tunneling microscopy and spectroscopy of single-walled carbon nanotubes on hydrogen-passivated Si(100) surfaces

Applied Physics Letters

Volumn 83, Issue 24, 2003, Pages 5029-5031

  Albrecht, P M ^a   Lyding, J W ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRON TUNNELING; FERMI LEVEL; HYDROGEN; NANOTECHNOLOGY; PASSIVATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SPECTROSCOPY; SUBSTRATES;

HYDROGEN-PASSIVATED SILICON; SINGLE-WALLED CARBON NANOTUBE; ULTRAHIGH-VACUUM SCANNING TUNNELING MICROSCOPY;

CARBON NANOTUBES;

EID: 0345872394     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1633014     Document Type: Article

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