Scanning tunnelling spectroscopy and ab initio calculations of single-walled carbon nanotubes interfaced with highly doped hydrogen-passivated Si(100) substrates

Nanotechnology

Volumn 18, Issue 9, 2007, Pages

  Albrecht, Peter M ^a,b   Barraza Lopez, Salvador ^a,b,c   Lyding, Joseph W ^a,b  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTALLINE MATERIALS; DOPING (ADDITIVES); ELECTRONIC PROPERTIES; HYDROGEN; PASSIVATION; SCANNING TUNNELING MICROSCOPY; SILICON;

ADSORPTION ENERGY; HYBRID ELECTRONIC DEVICES;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

SINGLE WALLED NANOTUBE;

AB INITIO CALCULATION; ADSORPTION; ARTICLE; POLARIZATION; PRIORITY JOURNAL; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR;

EID: 33947524627     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/9/095204     Document Type: Article

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