Metal-induced gap states at a carbon-nanotube intramolecular heterojunction observed by scanning tunneling microscopy

Small

Volumn 3, Issue 2, 2007, Pages 280-284

  Ruppalt, Laura B ^a   Lyding, Joseph W ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

Carbon nanotubes; Heterojunctions; Molecular electronics; Scanning tunneling microscopy; Semiconductors

Indexed keywords

CARBON NANOTUBES; CHARGE TRANSFER; ELECTRIC CONDUCTANCE; INTERFACES (MATERIALS); SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS;

CURRENT IMAGE TUNNELING SPECTROSCOPY (CITS); ELECTRONIC TRANSITION; METALLIC NANOTUBES; MOLECULAR ELECTRONICS;

HETEROJUNCTIONS;

CARBON NANOTUBE; METAL;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; METALS; MICROSCOPY, SCANNING TUNNELING; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES, CARBON; PARTICLE SIZE; SEMICONDUCTORS; SURFACE PROPERTIES;

EID: 33847024557     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.200600343     Document Type: Article

References (42)

1. a) S. I. Tans, A. R. M. Verschueren, C. Dekker, Nature 1998, 393, 49;
2. b) Y.-M. Lin, J. Appenzeller, Z. Chen, Z.-G. Chen, H.-M. Cheng, P. Avouris, IEEE Electron Device Lett. 2005, 26, 823;
3. c) J. A. Misewich, R. Martel, P. Avouris, J. C. Tsang, S. Heinze, J. Tersoff, Science 2003, 300, 783;
4. d) M. Freitag, J. C. Tsang, J. Kirtley, A. Carlsen, J. Chen, A. Troeman, H. Hilgenkamp, P. Avouris, Nano Lett. 2006, 6, 1425;
5. e) Z. Chen, I. Appenzeller, Y.-M. Lin, J. Sippel-Oakley, A. G. Rinzler, J. Tang, S. Wind, P. Solomon, P. Avouris, Science 2006, 311, 1735.
6. a) N. Hamada, S.-I. Sawada, A. Oshiyama, Phys. Rev. Lett. 1992, 68, 1579;
7. b) R. Saito, M. Fujita, G. Dresselhaus, M. S. Dresselhaus, Phys. Rev. B 1992, 46, 1804.
8. a) P. Lambin, A. Fonesca, J. P. Vigneron, J. B. Nagy, A. A. Lucas, Chem. Phys. Lett. 1995, 245, 86;
9. b) L. Chico, V. H. Cresou, L. X. Benedict, S. G. Louie, M. L. Cohen, Phys. Rev. Lett. 1996, 76, 971;
10. c) J.-C. Charlier, T. W. Ebbesen, P. Lambin, Phys. Rev. B 1996, 53, 11108;
11. d) M. S. Ferreira, T. G. Dargam, R. B. Muniz, A. Latgé, Phys. Rev. B 2000, 62, 16040.
12. a) M. Ouyang, J.-L. Huang, C. L. Cheung, C. M. Lieber, Science 2001, 293, 97;
13. b) L. C. Venema, J. W. Janssen, M. R. Buitelaar, J. W. G. Wildöer, S. G. Lemay, L. P. Kouwenhoven, C. Dekker, Phys. Rev. B 2000, 62, 5238;
14. c) M. Stadermann, S. I. Papadakis, M. R. Falvo, Q. Fu, J. Liu, Y. Fridman, J. J. Boland, R. Superfine, S. Washburn, Phys. Rev. B 2005, 72, 245406;
15. d) Z. Klusek, S. Datta, P. Byszewski, P. Kowalczyk, W. Kozlowski, Surf. Sci. 2002, 507, 577.
16. Z. Yao, H. W. C. Postma, L. Balents, C. Dekker, Nature 1999, 402, 273.
17. A. A. Odinstov, Phys. Rev. Lett. 2000, 85, 150.
18. SWNTs purchased from Carbon Nanotechnologies, Inc., Houston, TX.
19. P. M. Albrecht, J. W. Lyding, Appl. Phys. Lett. 2003, 83, 5029.
20. L. B. Ruppalt, P. M. Albrecht, J. W. Lyding, J. Vac. Sci. Technol. B 2004, 22, 2005.
21. SWNT diameter estimated from STM-measured height of primary nanotube feature.
22. The multiple nature of the STM tip is not expected to affect SWNT STS measurements as only the primary apex participates in tunneling when the tip is positioned over the highest nano-tube feature.
23. R. J. Hamers, R. M. Tramp, J. E. Demuth, Phys. Rev. Lett. 1986, 56, 1972.
24. T. W. Odom, J.-L. Huang, P. Kim, C. M. Lieber, J. Phys. Chem. B 2000, 104, 2794.
25. a) N. P. Guisinger, M. E. Greene, R. Basu, A. S. Balluch, M. C. Hersam, Nano Lett. 2004, 4, 55;
26. b) T. Rakshit, G.-C. Liang, A. Ghosh, S. Datta, Nano Lett. 2004, 4, 1803.
27. Y.-H. Kim, M. J. Heben, S. B. Zhang, Phys. Rev. Lett. 2004, 92, 176102.
28. a) V. Heine, Phys. Rev. 1965, 138, A1689;
29. b) J. Tersoff, Phys. Rev. Lett. 1984, 52, 465;
30. c) S. G. Louie, M. L. Cohen, Phys. Rev. B 1976, 13, 2461.
31. P. N. First, J. A. Stroscio, R. A. Dragoset, D. T. Pierce, R. J. Celotta, Phys. Rev. Lett. 1989, 63, 1416.
32. T. C. G. Reusch, M. Wenderoth, L. Winking, N. Quaas, R. G. Ulbrich, Phys. Rev. Lett. 2004, 93, 206801.
33. H. Kataura, Y. Kumazawa, Y. Maniwa, I. Umezu, S. Suzuki, Y. Ohtsuka, Y. Achiba, Synth. Met. 1999, 303, 2555.
34. R. Saito, M. Fujita, G. Dresselhaus, M. S. Dresselhaus, Appl. Phys. Lett. 1992, 60, 2204.
35. J. W. Lyding, S. Skala, J. S. Hubacek, R. Brockenbrough, G. Gammie, Rev. Sci. Instrum. 1989, 59, 1897.
36. P. Mårtensson, R. M. Feenstra, Phys. Rev. B 1989, 39, 7744.
37. G. W. Gobeli, F. G. Allen, Phys. Rev. 1965, 237, A245.
38. H. B. Michaelson, J. Appl. Phys. 1950, 21, 536.
39. R. M. Feenstra, Phys. Rev. Lett. 1994, 50, 4561.
40. a) N. D. Lang, Phys. Rev. B 1986, 34, 5957;
41. b) R. M. Feenstra, J. A. Stroscio, A. P. Fein, Surf. Sci. 1986, 383, 295.
42. InAs wafer purchased from Wafer Technology, Ltd., Buckinghamshire, UK.