A 15.5mΩcm2-680V superjunction MOSFET reduced on-resistance by lateral pitch narrowing

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn 2006, Issue , 2006, Pages

  Saito, Wataru ^a   Omura, Ichiro ^a   Aida, Satoshi ^a   Koduki, Shigeo ^a   Izumisawa, Masaru ^a   Yoshioka, Hironori ^a   Okumura, Hideki ^a   Yamaguchi, Masakazu ^a   Ogura, Tsuneo ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

High voltage device; Low on resistance; Power MOSFET; Superjunction

Indexed keywords

AVALANCHE DIODES; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; SEMICONDUCTOR JUNCTIONS;

HIGH VOLTAGE DEVICES; LOW ON RESISTANCE; POWER MOSFET; SUPERJUNCTIONS;

MOSFET DEVICES;

EID: 34247519271     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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