Mode dynamics of high power (InAl) GaN based laser diodes grown on bulk GaN substrate

Journal of Applied Physics

Volumn 101, Issue 8, 2007, Pages

  Swietlik, T ^a   Franssen, G ^a   Czernecki, R ^a,b   Leszczynski, M ^a,b   Skierbiszewski, C ^a   Grzegory, I ^a,b   Suski, T ^a   Perlin, P ^a,b   Lauterbach, C ^c   Schwarz, U T ^c  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b UNIVERSITY OF REGENSBURG   (Germany)

^c TOPGAN LTD   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; LIGHT EMITTING DIODES; NEAR FIELD SCANNING OPTICAL MICROSCOPY; PHOTONS; SUBSTRATES;

ABSORPTIVE SUBSTRATES; BEAM STEERING; PULSE LENGTH; TEMPORAL DYNAMICS;

SEMICONDUCTOR LASERS;

EID: 34247591019     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2718881     Document Type: Conference Paper

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