Influence of the layer design on the far field pattern in GaN based laser structures

Physica Status Solidi (A) Applied Research

Volumn 194, Issue 2 SPEC., 2002, Pages 414-418

  Rowe M ^a   Michler, P ^a   Gutowski, J ^a   Bader, S ^b   Bruderl G ^b   Kummler V ^b   Miller, S ^b   Weimar, A ^b   Lell, A ^b   Harle V ^b  

^a UNIVERSITY OF BREMEN   (Germany)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; ALUMINUM; CLADDING (COATING); CURRENT DENSITY; OPTICAL WAVEGUIDES; SEMICONDUCTOR LASERS; THICKNESS MEASUREMENT;

CLADDING LAYER; FAR FIELD PATTERN; OPTICAL CONFINEMENT;

GALLIUM NITRIDE;

EID: 0036962309     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200212)194:2<414::AID-PSSA414>3.0.CO;2-V     Document Type: Article

References (7)

1. M. Onomura, S. Saito, K. Sasanuma, G. Hatakoshi, M. Nakasuji, J. Rennie, L. Sugiura, S. Nunoue, J. Nishio, and K. Itaya, IEEE J. Sel. Top. Quantum Electron. 5, 765 (1999).
2. T. Takeuchi, T. Detchprohm, M. Iwaya, N. Hayashi, K. Isomura, K. Kimura, Y. Yamaguchi, H. Amano, I. Akasaki, Yw. Kaneko, R. Shioda, S. Watanabe, T. Hidaka, Y. Yamaoka, Ys. Kaneko, and N. Yamada, Appl. Phys. Lett. 75, 2960 (1999).
3. T. Sato, M. Iwaya, K. Isomura, T. Ukai, S. Kamiyama, H. Amano, and I. Akasaki, IEICE Trans. Electron. E 83, 573 (2000).
4. V. E. Bougrov, and A. S. Zubrilov, J. Appl. Phys. 81, 2952 (1997).
5. M. Röwe, P. Michler, J. Gutowski, S. Bader, G. Brüderl, V. Kümmler, A. Weimar, A. Lell, and V. Härle, phys. stat. sol. (a) 188, 65 (2001).
6. K. H. Schlereth and M. Tacke, IEEE J. Quantum Electron. 26, 627 (1990).
7. M. J. Bergmann and H. C. Casey, Jr., J. Appl. Phys. 84, 1196 (1998).