Charge accumulation layer in Cs,Ba/n-GaN(0001) ultrathin interfaces: Electronic and photoemission properties

Physics of the Solid State

Volumn 49, Issue 4, 2007, Pages 646-650

  Benemanskaya, G V ^a   Lapushkin, M N ^a   Timoshnev, S N ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34247465072     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063783407040075     Document Type: Article

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