Electronic structure of the ultrathin Cs/Si(100)-(2 × 1) and Cs/Si(111)-(7 × 7) interfaces in the threshold energy region

Surface Review and Letters

Volumn 5, Issue 1, 1998, Pages 91-95

  Benemanskaya, G V ^a   Daineka, D V ^a   Frank Kamenetskaya, G E ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b Department of General Physics Technological Institute   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039193679     PISSN: 0218625X     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0218625X98000190     Document Type: Article

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